Na₂Ti₃O₇nanowires with diameters of about 80-130 nm and lengths up to several tens of micrometers are synthesized via a simple hydrothermal method and characterized by the field-emission scanning electron microscopy and X-ray diffraction. Back-gate field-effect transistors based on these nanowires are fabricated on indium tin oxide glass substrates with polymethyl-methacrylate-co-glyciclyl-methacrylate as the gate insulator layers. Typical p-type semiconductor material properties are observed in our investigations. The field-effect mobility is about 0.1 cm²/Vs. The capacitance per unit area of the dielectric is 3.43 nF/cm² (dielectric constant, k = 3.9). The on/off ratio is around 10³ at the conduction of 10 V.