Development of high performance room temperature sensors remains a grand challenge for high demand of practical application. Metal oxide semiconductors (MOSs) have many advantages over others due to their easy functionalization, high surface area, and low cost. However, they typically need a high work temperature during sensing process. Here, p-type sensing layer is reported, consisting of pore-rich dumbbell-like Co3O4 particles (DP-Co3O4) with intrinsic high catalytic activity. The gas sensor (GS) based DP-Co3O4 catalyst exhibits ultrahigh NH3 sensing activity along with excellent stability over other structure based NH3GSs in room temperature work environment. In addition, the unique structure of DP-Co3O4 with pore-rich and high catalytic activity endows fast gas diffusion rate and high sensitivity at room temperature. Taken together, the findings in this work highlight the merit of integrating highly active materials in p-type materials, offering a framework to develop high-sensitivity room temperature sensing platforms.